Materials Science Forum, Vol.338-3, 1187-1190, 2000
Fabrication and testing of 1,000V-60A 4H-SiC MPS diodes in an inductive half-bridge circuit
4H-SiC merged PiN/Schottky-barrier (MPS) diodes have been modeled and fabricated. DC I-V characterization has been done at RT and 255 degreesC. The MPS diodes have shown greatly reduced reverse leakage current density, characteristic of PiN diodes, and unipolar forward properties, characteristic of Schottky-barrier diodes. AC switching in an inductive half-bridge circuit has also been performed to over 60 A.