Both transient and DC breakdown characteristics of 6H-SiC Schottky diodes have been measured. The data show large discrepancies between the set of tested devices. Most devices withstand a maximum voltage under transient voltage pulses above DC Breakdown. On the other hand some parts have premature failures with a 75 % derating. This set of data is representative of both the quality of the material and the structure of the device (electric field control edge).