Schottky barrier height and other contact parameters of various materials (Al, Au, and Cu) on p-type 6H-SiC have been measured by using I-V and C-V techniques. The measured barrier heights were between 1.18eV and 2.87eV depending on the metal and measurement techniques used. Interfacial layers of different properties are assumed to be present, which result in different barrier heights measured by different techniques.