The forward and reverse bias current density (J) vs voltage (V) characteristics of a P-type 6H SIC Schottky diode was simulated using ATLAS device modeling software from SILVACO. Based on the simulation results, the reverse breakdown voltage of a P-type 611 SiC Schottky diode with a 7000 Angstrom thick oxide layer field plate edge termination was predicted. The measured J-V characteristics indicate a close match between experimental and simulation results, confirming the accuracy of the model.