In this paper we present the work on of submicron gate length SiC MESFET's performed at Chalmers University. A process for fabrication of air-bridged multi-finger high power Silicon Carbide MESFETs has been developed. Measurement results as well as small signal, and noise modeling for two different batches are presented. Drift Diffusion simulations have been used to understand the physical processes in the MESFET.