A comparison of nitrogen vs, phosphorus as implant species for source/drain and RESURF region in high-voltage lateral RESURF MOSFETs in 4H-SiC indicates that phosphorus is good for source/drain implants and nitrogen is preferred for the RESURF region due to the better activation for low doses at low implant anneal temperatures. RESURF MOSFETs with blocking voltages in excess of 1200V have been obtained with a specfic on-resistance of 4 Omega .cm(2).