Metal-Insulator-Semiconductor Field Effect Transistors (MISFETs) with ion implanted source and drain junctions have been made in 6H silicon carbide (SIC). Aluminum nitride (AlN) was used as the insulating gate dielectric, and was grown using molecular beam epitaxy (MBE). Gate controlled transistor operation was shown with an inversion layer mobility of 10-20 cm(2) / Vs. However, due to relaxation of the AlN film, the gate leakage was excessive, which precluded a thorough investigation of the transistor characteristics. This paper describes the manufacturing process and current Voltage characteristics, and an improved process sequence is also proposed.