High-voltage n(+)/p/p(+) junction rectifiers have been fabricated on 4H-SiC using nitrogen and phosphorus as nt implants. The performance of the devices, fabricated with varying junction termination extension (JTE) species and post-implant anneal temperatures, were compared. Diodes with breakdown voltage as high as 1300V were obtained using a 10 mum epitaxial layer. The best forward forward characteristics were obtained on the phosphorus implanted diodes annealed at 1600 degreesC (forward voltage similar to 5V at 100A/cm(2)). The leakage currents on the phosphorus implanted diodes were slightly higher than the nitrogen implanted diodes (due to damage caused by the heavier phosphorus).