In this paper, a closed-form analytical solution of 6H-SiC Punch-Through junction breakdown voltages is presented and verified. It is shown that to obtain a minimum base region specific on-state resistance for 6H-SiC unipolar power devices, a value of beta congruent to0.6 (beta =V-RT/V-PT) is required. The results can also be used to design soft recovery PiN diodes.