We report on a 2 mm diameter, 4H-SiC, asymmetrical Gate Turn Off (GTO) Thyristor with a blocking voltage of 2600 V and a forward current of 12 A - the highest reported power handling capability of 31 kW for a single device in SiC. Furthermore, the I mm diameter devices showed a forward blocking voltage of 3100 V. The 5-epilayer structure utilized a blocking layer that was 50 mum thick, p-type, doped at about 7-9x10(14) cm(-3). The devices were terminated with a single zone Junction Termination Extension (JTE) region formed by ion-implantation of nitrogen at 650 degreesC. The devices required less than 10 mA gate current to turn-on when blocking 2000 V between anode and cathode.