This paper reports the first demonstration of a SiC switch operating at 100 Id-It under hard driven, clamped inductive switching conditions. The switch, consisting of a SiC Junction Controlled Thyristors (JCT) and SiC free-wheeling diodes, was tested up to 150 V/0.8 A (=207 A/cm(2)). The turn-off energy per cycle was 4.5 muJ, corresponding to a total switching loss of similar to0.45 W (similar to 116 W/cm(2)) @ 100 kHz. Turn-on losses were <10 % of the turn-off losses. Snappy diode recovery of 15 ns resulted in peak transient current enhancement of 3.5x. A first estimate is made for expected power loss of practical SiC switches with modest device ratings.