Large area 4H SiC PIN diodes (20mm(2) and 40mm(2)) for high power applications were manufactured and assembled in a classical high power press pack module. This module consists of four 2500V Si-IGBT chips and four antiparallel connected 2500V SiC diodes. Such modules are operated in application circuits with nominal conditions of 800V(dc) and 150A peak current. Diode switching losses are reduced to 4% of the Silicon reference. Compared to small diodes, large device chips show a high spread in leakage current density and often a reduced static blocking voltage. However, excellent transient switching characteristics can be maintained.