Pulsed laser deposition was applied to prepare aluminum nitride films of up to 1250 nm thickness onto c- or r- cut sapphire substrates with (00.1) or (11.0) orientation, respectively. X-ray diffraction goniometry revealed a preferential in-plane alignment of the AIN crystals. First experiments on several potential applications are presented where orientation dependent properties of AIN are significant. A r.f. delay line based on surface acoustic waves in AlN(11.0) generated along the AlN c-axis was fabricated. Silicon carbide films were grown on AlN predeposited sapphire substrates. Optical wave guiding was demonstrated in an AlN film.