Hydrogen adsorption and desorption from GaN(0001) was studied using high resolution electron energy loss spectroscopy HREELS), energy loss spectroscopy ELS), low energy electron diffraction (LEED), Auger electron spectroscopy (AES), and temperature programmed desorption (TPD). HREELS loss peaks produced by atomic hydrogen were observed at 2580, 3280, and 3980 cm (-1) and are attributed to Ga-H bonds. Heating the surface to 380 degreesC completely removes the absorbate vibrational peaks. TPD confirms that the disappearance of GaH feature in HREEL spectra is due to recombinative desorption of hydrogen. Overall, this work demonstrates that the recombinative desorption of hydrogen from surface Ga sites occurs over the range of 250 to 500 degreesC.