Ohmic contacts have been fabricated on Si doped n-GaN using Ti/Al by low temperature annealing. Contact resistivity values of 8.6x10(6) ohm-cm(2) were obtained for 3.67x10(18) cm(-3) doped samples after annealing at 500 degreesC. SIMS analysis showed that Al diffused through the Ti layer after annealing. As a result Al low work function metal to n-GaN may have resulted in good ohmic contact. Photoluminescence (PL) showed that there was no degradation in the epilayer quality of the film annealed at this temperature for 25 min.