Solar Energy Materials and Solar Cells, Vol.66, No.1-4, 631-636, 2001
Improvement in photovoltaic conversion efficiency of InGaP solar cells grown on Si substrate by thermal cleaning using Si2H6
A new type of thermal cleaning for Si surfaces, using Si2H6, has been developed for growing GaAs buffer layers with an A-step surface on an Si substrate by metaloraganic vapor-phase epitaxy (MOVPE). This process made it possible, for the first time, to grow an A-step surface InGaP solar cell structure on an Si substrate with good surface morphology. An improvement in photovoltaic conversion efficiency has been achieved by this newly developed process. (C) 2001 Elsevier Science B.V. All rights reserved.