Solar Energy Materials and Solar Cells, Vol.67, No.1-4, 77-82, 2001
Characterization of Cu(In,Ga)Se-2 thin films prepared by thermal crystallization on Mo/glass substrate
Thin films of Cu(In,Ga)Se-2 were prepared by thermal crystallization on the sputtered Mo/substrate and characterized. MoSe2 layer was formed at the interface between Cu(In,Ga)Se-2 and Mo layers after the thermal crystallization. The graded Ga concentration in crystallized Cu(In,Ga)Se-2 thin films was confirmed. Cu(In,Ga)Se-2 thin films prepared on the Mo/soda-lime glass had large and columnar grains rather than those on the Mo/quartz substrate. (C) 2001 Elsevier Science B.V. All rights reserved.