Metal organic vapor-phase epitaxy (MOVPE) is used to prepare epitaxial reference films and solar cells based on CuGaSe2. Room temperature Hall measurements are performed on epitaxial CuGaSe2. Conductivities up to 0.7(Omega cm)(-1) were obtained. Highest mobilities of 270cm(2)/Vs are observed for near stoichiometric slightly Ga-rich films. Net charge carrier concentration is higher in the Cu-rich grown films than in the Ga-rich films. Solar cells with epitaxial absorber are prepared that reach efficiencies of 3.3%. First polycrystalline solar cells are grown on Mo/glass at reduced substrate temperatures. Under AM1.5 illumination open-circuit voltages up to 740mV and efficiencies of 2.0% are obtained. (C) 2001 Elsevier Science B.V. All rights reserved.