This paper reviews the present status of radiation-resistant solar cells made with Si, GaAs, InP and InGaP/GaAs for space use. At first, properties of radiation-induced defects in semiconductor materials and solar cells are described based on an anomalous degradation of Si space solar cells under high-energy, high-fluence electron and proton irradiations. Advantages of direct bandgap materials as radiation-resistant space cells are presented. Unique properties of InP as radiation-resistant cells have also been found. A world-record efficiency of 26.9% (AM0) has been obtained for an InGaP/GaAs tandem solar cell. Radiation-resistance of the InGaP/GaAs tandem cells is described. (C) 2001 Elsevier Science B.V. All rights reserved.