The hydrogen bonding properties of nitrogen-doped silicon thin films, prepared using highly diluted SiH4, are examined. The structure of the films was found to change from microcrystalline to amorphous as a result of nitrogen doping. The Si-N and Si-H bonds exhibited different dependencies on nitrogen doping conditions. The intensity of the infrared absorption peak of the Si-N bonds was revealed to increase monotonically with nitrogen doping, with no peak shift or change in peak width. By contrast, the infrared absorption of the Si-H bonds exhibited a dependence, not only on the level of doping, but also on the structure of the film.