Hg1-xCdxTe films were prepared on Si-patterned substrates by the pulse laser deposition technique from a Hg1-xCdxTe target (x approximate to 0.2). The effects of different substrate temperatures, ranging from 293 to 543 K, different laser shots number in the range of 10-380, and the morphological type of the patterned substrate on the x-composition of films were studied by electron probe microanalysis (EPMA) and electroreflectance (ER) spectroscopy. The correlation between a film composition measured by EPMA and one determined from ER spectra data was observed.