Vapor phase epitaxy (WE) of Hg1-xCdxI2 layers on glass substrates covered by a CdTe buffer layer has been studied. The buffer layers of 2-4 mum thickness were formed by VPE using polycrystalline CdTe and Cd metal sources. The Hg1-xCdxI2 layers were grown using a (Hg1-yCdy)(1-z)(I-2)(z) polycrystalline source, with a composition in the range of y = 0.1-0.5 and z = 0.5-0.8. Scanning electron microscopy and X-ray diffraction studies have shown that the composition and structure of Hg1-xCdxI2 layers depend strongly on the VPE conditions. Varying the growth time and source composition, it has been possible to obtain Hg1-xCdxI2 layers with the composition x in the range from approximately 0 (HgI2 tetragonal structure) to 1 (CdI2 hexagonal structure).