화학공학소재연구정보센터
Thin Solid Films, Vol.381, No.1, 62-68, 2001
Cryogenic deposition of carbon nitride films using a neutralized atomic nitrogen beam
Thin carbon nitride CNx films were successfully prepared by co-deposition at cryogenic temperatures, ranging from 20 to 80 K, of fullerene C-60 or cyanogen with energetic neutralized atomic nitrogen fluxes under initial ion beam energies varied from 200 to 700 eV. Film growth rates in excess of 1 mum h(-1) and stoichiometries ranging from almost pure C to above 40 at.% N were formed. Film hardness and adherence were good for films with approximately 20 at.% nitrogen while higher nitrogen concentrations yield cyano-rich, soft films. The Fourier transform infrared, Raman and X-ray photoelectron spectra showed the predominantly sp(2) character of the chemical bonding between nitrogen and carbon in the films containing 29-37 at.% N, and suggest an amorphous graphite-like structure for the carbon nitride C3N4 phase present along with graphitic carbon as a by-product in the films prepared by cryodeposition onto Si substrates. X-Ray diffraction and scanning electron microscopy studies did not indicate the presence of any crystalline carbon nitride polymorphs in the film.