beta -FeSi2 film preparation with a high-frequency induction thermal chemical vapor deposition (CVD) was tried using biscyclopentadienyliron [ferrocene: Fe(C5H5)(2)] as an iron source and silane (SiH4) as a silicon source. It was found that beta -FeSi2 could be obtained directly from silane and ferrocene, if the reaction of carbon from ferrocene and silicon from silane is suppressed. The Seebeck coefficient of deposit, formed and composed of beta -FeSi2 and Si, was approximately 33 muV K-1 at 1000 K. Its electrical conductivity was approximately 200 Omega (-1) cm(-1) at 1000 K.