The temperature dependence of the Hall coefficient in p-type Cr-doped beta -FeSi2 films and single crystals is analyzed within the framework of a simple model of a semiconductor with two types of carriers of one sign. The result indicates the existence of an impurity band and makes it possible to determine the gap between the main and impurity band formed by shallow acceptor levels. The value of the activation energy of the deep accepters, the concentration of the shallow and deep acceptors as well as the concentration of the compensating donors are also calculated. Furthermore, the dominant scattering mechanisms are determined.