Our results indicate that macroscopic areas (similar to mm(2)) of thin films of hydrogenated amorphous Si (a-Si:H) with high hydrogen content (20-45 at.% H) can be crystallized very simply by applying an above-threshold (similar to 2x10(5) V/cm) an electric field perpendicular to the film. We investigate p(+)-i-n(+) and p(+)-p-n-n(+) a-Si:H structures sandwiched between CrNi and ITO electric contacts. The crystallization is achieved at room temperature and normal air pressure. We believe this is a new type of metal-induced crystallization in solid phase, mediated by Ni (or Cr) silicides that are formed from the CrNi contacts. High concentration of voids in our high-hydrogen content a-Si:H structures may contribute to easy migration of the silicides, thereby catalyzing the easy crystallization.