Experimental results and results of numerical calculations of T-dependencies of photoconductivity sigma (ph) in a-Si:H are reported. It was experimentally observed that the photoconductivity in p-type a-Si:H films (in contrast to n-type ones) depends only slightly on the Fermi level position and defect concentration at temperatures from 200 to 330 K. It is shown that such asymmetric E-F - E-V and N-D dependencies of sigma (ph) result from asymmetry of states density distribution in tails. According to calculations, the activated behavior of photoconductivity in p-type a-Si:H is controlled by recombination of free carriers through dangling bonds. But occupation statistic of dangling bonds in p-type a-Si:H under illumination differs essentially from the one in the dark.