Low dielectric constant (low k) plasma polymerized methyl-cyclohexane (PPMCHex) thin films were deposited by inductively coupled plasma-enhanced chemical vapor deposition (ICPECVD). Effects of the inductively coupled plasma (ICP) power and the substrate bias (SB) power on the properties of PPMCHex thin films were investigated. As the ICP power or the SE power increased, the deposition rate and the k value increased. As the ICP power increased from 5 to 70 W with the SE power fixed at 10 W, the relative dielectric constant (k) increased from 2.65 to 3.14. As the SE power increased from 5 to 70 W with the ICP power fixed at 10 W, the k value increased from 2.63 to 3.47. The thermal stability of the PPMCHex thin film deposited with the increased SE power and the fixed ICP power increased significantly, while that of the PPMCHex thin film deposited with the increased ICP power and the fixed SE power did not increase notably. The PPMCHex thin films deposited with the SE power greater than or equal to 30 W and the ICP power = 10 W were stable up to 450 degreesC.