A process for depositing 50 degrees C silicon nitride films has been developed in a high-density (electron cyclotron resonance) plasma system. While conventional 250 degrees C deposited nitrides have Si-H/N-H bond ratios <1.0, the silane flow rates explored in this process are shown to result in Si-H/N-H bond ratios greater than or equal to 1.0 and to have little effect on electrical properties in this range. Current densities of the resulting films are below 3 x 10(-9) A/cm(2) for electric fields below 2 MV/cm. Breakdown voltage, defined by 1 x 10(-6) A/cm(2), is greater than 6 MV/cm.