A novel approach for the production of large area 3C-SiC substrates is described. Ultrathin (<20 nm) Si seed layers were transferred to high purity polycrystalline 3C-SiC substrates through a unique wafer bonding process. The ultrathin Si seed layer was subsequently carbonized and used as the nucleation layer for high temperature (>1500 degrees C) growth of epitaxial 3C-SiC. The use of more optimal growth temperatures, not limited by the melting point of Si, led to 3C-SiC films of high crystalline quality. Double-crystal X-ray diffraction measurements of the 3C-SiC(200) reflection gave peak widths of 660 arcsec.