We have succeeded in anodizing single crystal 3C-SiC and performed X-ray absorption studies before and after the anodization. Silicon K-edge X-ray absorption near edge structure reveals that the anodization causes slight changes in the electronic state of the conduction band. The conduction band minimum shifts toward higher energy after the anodization. Extended X-ray absorption fine structure, however, shows no changes in the local crystal structure such as bond length and coordination number.