Low-resistance ohmic contacts to the Si-doped In0.17Ga0.83N (n(d) = 1.63 x 10(19) cm(-3)) were obtained using the W metallization schemes. It is shown that the specific contact resistances improve with increasing annealing temperature. The annealing of the contact at 950 degrees C for 90 s results in a specific contact resistance of 2.7 x 10(-8) Omega cm(2). X-ray diffraction results show that a beta-W2N phase is formed at the interface between the W and InGaN when annealed at temperatures greater than or equal to 500 degrees C. Conduction mechanisms in the contacts are found to depend on annealing temperature. Possible explanations are given to describe the annealing temperature dependence of the specific contact resistance.