An electrochemical etching process is used for evaluating the types and the distribution of crystal defects on both the Si and C faces of p-type 6H and 4H-SiC. The surface morphology of the etched area is different For the two surface polarities. Dislocation-related etch-pits appeared on the etched surfaces due to a preferential etching process. The etching experiments were conducted in a commercial apparatus in combination with accurate capacitance-voltage profiling, showing that this characterization method is highly useful and simple for evaluating SIC material quality.