This paper examines the process issues of integrating a precision resistor feature into an existing salicided complementary metal oxide semiconductor technology. The resistor features are created by selectively blocking salicide formation with a thin nitride layer that must be compatible with the existing device and salicide processes. The integrity of the blocking layer during the HF-based salicide preclean is of special concern. Methods to monitor and control the properties of the thin nitride blocking layer have been developed.