Journal of the Electrochemical Society, Vol.147, No.10, 3759-3767, 2000
Porous anodic etching of p-Cd1-xZnxTe studied by photocurrent spectroscopy
Anodic treatment of p-Cd1-xZnxTe (x = 0, 0.05, and 0.12) in 0.5 M H2SO4 leads to the formation of a network of pores which can extend more than 100 mu m below the top surface. Photocurrent spectroscopy reveals the presence of Te-o on the surface of the pores. The Te-o film is on average thin (less than or equal to 5 Angstrom), in contrast to the thicker film obtained by photoanodic etching of n-CdTe. The photocurrent spectra are affected not only by the absorbance of Te-degrees, but also by recombination in the porous layer.