This investigation was undertaken to evaluate indium (In) as an alloying element in Al for interconnects with improved reliability and performance compared to the currently used AI-Cu alloys. The eventual goal is to prepare an aluminum-indium-lanthanum ternary alloy that would contain zero-flux planes to limit the diffusion of aluminum within the alloy. However, research on AI-In and AI-La is required prior to tailoring the desired ternary alloys. Indium was chosen because it has negligible solid solubility in aluminum and possesses a valence shell electronic configuration identical to that of aluminum. Lower solubility in the bulk may lead to segregation of solute along the grain boundaries and hence, to improved electromigration resistance. Isovalency minimizes the adverse effect on the resistivity from solute addition to aluminum. The main characteristics of the alloy films that have been examined are variations of resistivity with solute content, redistribution of solute atoms, microstructural evolution, ease of dry etching, and adhesion to silicon dioxide (SiO2). It is inferred from the results that even though aluminum-indium (AI-In) alloys exhibit low resistivity, they may not be suitable for interconnect applications due to poor adhesion of the as-deposited films to SiO2, the tendency to form hillocks upon annealing, and nonuniform solute segregation.