The objective of this study relates to producing a ZnSe epilayer on porous silicon. In the subsequent process, ZnSe having a direct energy gap of 2.68 eV at room temperature was grown on porous silicon under differing anodization conditions utilizing chemical vapor deposition techniques, resulting in the successful growth of a single crystal ZnSe epilayer on the porous silicon substrate. The characteristics of the epilayer were then analyzed by X-ray diffraction and photoluminescence. The photoluminescence spectrum of the single ZnSe epilayer exhibited good emission properties at 444 nm (2.792 eV), 457 nm (2.718 eV), 478 nm (2.594 eV), and 574 nm (2.16 eV).