Fine-tuning of the temperature coefficients of capacitance and dielectric constant of magnesium orthostannate (Mg2SnO4) has been attempted by means of Sn (IV) and Zr (IV) oxide incorporation as a second phase. The additives were also employed to enhance the density and minimize or eliminate porosity at lower sintering temperatures. Phase-pure magnesium stannate powder was synthesized via conventional solid-state reaction. It was mixed with ZrO2 and/or SnO2 and sintered in the temperature range 1500 degrees -1600 degreesC for up to 6 h. Electrical measurements using an AC immittance spectroscopic technique over the temperature range 25 degrees -300 degreesC, on Mg2SnO4 compacts containing 5 wt.% of additives and sintered at 1500 degreesC/ 6 h, were carried out. Data analyses revealed that the capacitance and the derived dielectric constant remained invariant over more than 3 decades of frequency in the kilo to megahertz regime. It was also found that addition of ZrO2 and SnO2 has a benign effect on both temperature coefficient of capacitance (TCC) and temperature coefficient of dielectric constant (TCK) as it resulted in smaller dependence of capacitance and dielectric constant compared to pure Mg2SnO4. Typically, the TCC values were 5 and 30 ppm/degreesC and TCK values were 20 and 30 ppm/degreesC for 5 wt.% ZrO2- and 5 wt.% SnO2- added Mg2SnO4, respectively, in the temperature range 25 degrees -300 degreesC.