Pulsed electron cyclotron resonance (ECR) plasmas from 1,1,2,2-C2H2F4 are used to deposit fluorocarbon films. The deposited films have a F : C ratio of 1, with only slight variations in % CFx as the deposition pressure is decreased. The optical emission (OES) spectra of the pulsed C2H2F4 plasmas show high intensity peaks for H, C-2, and C-3, with lower intensity CF2 and F peaks. The dominant OES peak shifts from H-alpha, to C-2 when the pressure is reduced, most likely a result of the increased electron temperature at the lower pressure. Gas-phase recombination reactions may be occurring between the OES sampling region and the deposition substrate (similar to 8-in. distance), producing fluorocarbon molecular deposition species, thus accounting for the high degree of fluorination in the deposited films. Parallel plate plasma deposited films from C2H2F4 show less fluorination than their ECR counterparts, as well as vastly different OES spectra, with CF2 peaks dominating the spectra versus H and C. The presence of ion bombardment in the parallel plate system tends to defluorinate the depositing films, and thus can account for the less fluorinated films deposited in the parallel plate versus ECR systems.