Previous Article Next Article Table of Contents Journal of Chemical Physics, Vol.115, No.15, 7330-7330, 2001 DOI10.1063/1.1405500 Export Citation Stoichiometry changes by selective vacancy formation on (110) surfaces of III-V semiconductors: Influence of electronic effects (vol 114, pg 445, 2001) Semmler U, Simon M, Ebert P, Urban K Please enable JavaScript to view the comments powered by Disqus.
