The behaviour modelling of a CVD reactor is useful to better understand the involved complex mechanisms and determine the conditions required for the fabrication of depositions according to industrial standards. This approach was applied to the deposition of polycrystalline silicon doped in situ with phosphor. A model was developed to represent the deposition process which predicts correctly the excess of deposition thickness caused by silylene. The control of the deposition operation is mainly governed by the feed phosphine concentration and the inlet geometry where silylene is formed.