Two separate casting apparatuses were designed and fabricated using the resistance heating method and the RF heating method, respectively. Graphite and fused quartz were used as crucibles for the method, respective-ly. Their inner surfaces were coated with Si₃N₄ layer for the protection of the crucibles and the ingots. The impurity level, structure, grain size, and dislocation concentration of the polycrystalline silicon wafers which affect the efficiency of the solar cell were measured for each method and compared with the reference values published for high efficiency solar cells. The present casting method provided satisfactory results regardless of some difference in the physical properties de-pending on the methods adopted above.