Copper indium diselenide films were prepared by graphite box annealing of stacked elemental layer (SEL) precursors. Effects of annealing temperature and ambient atmosphere on the microstructural, optical and electrical properties were studied critically. Pt measurements were also carried out to find information on the defect levels. From the above studies, the optimum condition for the deposition of high quality CuInSe2 films by this technique was determined.