Yttria-stabilized zirconia (YSZ) thin films with yttria content between 5 and 30 mol% were deposited onto r-plane (10 (1) over bar 2) Al2O3, c-plane (0001) Al2O3 and Si (001) substrates by solid single-source metal organic chemical Vapor deposition (MOCVD) from Y(thd)(3) and zr(thd)(4) precursors in the temperature range 450-850 degrees C at a pressure of 0.40 kPa. With this delivery technique,,growth rates as high as 0.7 mu m min(-1) and as low as 2 nm min(-1) could be achieved reproducibly and controllably by varying the source feeding rate. The composition could be controlled precisely by varying the proportions of each precursor in the precursor mixture above a substrate temperature of 600 degrees C. YSZ thin films exhibit highly aligned columnar or fine-grained microstructures below this value.