Chemical vapor co-deposition of Cu-Co films has been demonstrated using (1,1,1,5,5,5-hexafluoro-2,4-pentanedionato)Cu(II) [Cu(hfac)(2)] [hfac = hexafluoroacetylacetonate] and (acetylacetonate)Co(II) [Co(acac)(2)] [acac = acetylacetonate] as precursors. The deposition was performed at the substrate temperature of 270 degrees C in a warm-wall impinging jet type reactor. The precursor Co(acac)(2) was sublimed at 140 degrees C to achieve reasonable precursor delivery rates and avoid decomposition of precursor in the sublimator. Films with varying Cu content from 17 wt.% to 98 wt.% were deposited by subliming Cu(hfac)(2) in the temperature range of 40-100 degrees C with a fixed Co(acac)(2) delivery rate. The morphologies and crystallinities of the binary films were strongly dependent on the film stoichiometry. Overall, this study provides insights into the mechanism of Cu-Co binary film formation by CVD.