In this study, we have investigated different methods for preparation of thin films of C-60 and C-70-sulfur compounds. Films of good quality were obtained by reaction of amorphous C-60 and C-70 films with a saturated sulfur solution in toluene at 40 degrees C or with saturated sulfur vapour at a temperature of 140 degrees C for several hours. The quality of the fullerene-sulfur films were strongly dependent on the microstructure of the initially deposited fullerene film and the synthesis temperature. X-ray diffraction analyses showed that both methods lead to the formation of films consisting of C60S16 and C70S48 (space groups C 2/c and Amm2, respectively). C60S16 films synthesised on Al2O3(012) and Si(100) substrates were texture-free while C70S48 films typically exhibited a preferential (100) orientation. The films were also characterised by Raman and IR- spectroscopy, which confirmed that the interactions between the fullerene molecules and the Sg rings are weak. The fullerene-sulfur compounds were found to be unstable at high Vacuum conditions. Both materials C60S16 and C70S48 are non-conductive at room temperature with conductivities less then 10(-5) (Omega/cm).