Amorphous hydrogenated silicon carbide (a-SiCx:H) films were fabricated via plasma-enhanced chemical Vapor deposition (PECVD) at a low substrate temperature. The properties of the him and their correlation with the deposition parameters were investigated with emphasis on moisture and corrosion resistance. The films can be deposited with good uniformity and repeatability. The moisture resistance is mostly influenced by the reactant gas flow ratio; increasing the silane flow enhances the moisture barrier ability of the film. The deposited film is chemically inert, is not oxidized by moisture at 85 degrees C, and remained unattacked after 2 months immersion in water at room temperature. The film is pinhole-free, and has excellent corrosion resistant properties. Thus this material is deemed a good candidate film for moisture and corrosion resistant applications.