A method for the preparation of Sb2S3 thin films from a non-aqueous medium is developed. In brief SbCl3, and CH3CSNH2 are dissolved in acetic acid (glacial) to prepare equimolar (0.1 M) solutions and Sb2S3 thin films are deposited at room temperature (27 degrees C). Characterization of the films is carried out with XRD, optical absorption, dark resistivity and thermo emf measurements. Studies reveal that as-deposited films are polycrystalline and crystallinity is improved after annealing in N-2 gas for 2 h. The optical bandgap decreases from 1.75 eV to 1.57 eV after annealing. Sb2S3 is an n-type semiconductor and has room temperature electrical resistivity of the order of 10(7) Omega cm.