Thin Solid Films, Vol.353, No.1-2, 62-66, 1999
Structural characterization of epitaxial Cu2Mo6S8 thin films grown on R-cut sapphire by pulsed laser deposition
We report the successful growth of Cu2Mo6S8 thin films. They were grown in situ by pulsed laser deposition (PLD) on R-cut sapphire substrates. Both X-ray (XRD) and high energy electron diffraction (RHEED) showed a high degree of epitaxial growth and theta-2 theta XRD analysis pointed out a (001)(R) orientation (in the rhombohedral setting). XRD phi-scans showed the coexistence of two rhombohedral families rotated by 180 degrees, with the epitaxial relations: [100](film) // [(1) over bar 11](substrate) and [010](film) // [(1) over bar 1 (1) over bar](substrate) for one family and the reverse for the other. Laue oscillations in the theta-2 theta XRD patterns and the narrow rocking curve on the (001)R reflection demonstrate the high crystalline quality, scanning tunneling microscopy (STM) and field emission high resolution scanning electron microscopy (FE-SEM) confirmed the surface smoothness and the in-plane alignment.