Transparent and crack-free Bi2Ti2O7 thin films with strong (111)orientation were successfully prepared on n-Si(100) by chemical solution deposition (CSD) using bismuth nitrate and titanium butoxide as starting materials. The structural properties were studied by X-ray diffraction.. The dielectric constant at 100 kHz at room temperature was 118 and loss factor was 0.074. for a 0.4-mu m-thick film annealed at 500 degrees C for 30 min. The leakage current density was 4.06 x 10(-7) A/cm(2) at an applied voltage of 15 V.